100 kV Electron beam lithography system  - nB3 (NanoBeam Ltd)


-Wafer size : 5mm-200mm, rectangle or round
-Beam size : 2.3nm
-Beam performance : <10nm spot at 5nA beam
-Deflection : Vector scan, 55MHz
-Address grid resolution : 1nm, 20-bit DAC
-Beam voltage : Selectable from 30kV to 100 kV
-Magnetic stray field : <600nT (<3nm beam noise)


퓨전테크놀로지센터(FTC) 1층 Clean Room 소재