
Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer
Juhyun Lee, Jeongsu Lee, Giyul Ham, Seokyoon Shin, Joohyun Park, Hyeongsu Choi, Seungjin Lee, Juyoung Kim,
Onejae Sul, Seungbeck Lee, and Hyeongtag Jeon
AIP advances, volume 7, No. 025311, 2017