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Top gate field-effect transistor based on atomic layer deposition-grown SnS2/graphene/h-BN heterostructures.

Hyoungbeen Ju, Jeongsu Lee, Gunwoo Lee, Hojun Seo, Sohee Kim, Namkyu Lee, Onejae Sul, Hyeongtag Jeon and Seung-Beck Lee

NANOKOREA 2017, July 12, 2017, KINTEX (Ilsan)